MMBTA42LT1G Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
300V
Ic Max
500mA
Pd Max
225mW
hFE Gain
25

Quick Reference

The MMBTA42LT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 300V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)300VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
LMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 25 225mW
MMBTA42-7-F NPN SOT-23 300V 500mA 40 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 40 300mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 60 350mW
FMMT497TA NPN SOT-23 300V 500mA 80 500mW
MMBTA42 NPN SOT-23 300V 500mA 80 250mW
MMBTA42 NPN SOT-23 300V 500mA 100 350mW
MMBTA42 NPN SOT-23 300V 500mA 200 350mW
YONGYUTAI ๐Ÿ“„ PDF
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