DN350T05-7 Datasheet & Equivalents
NPN
SOT-23
General Purpose
DIODES
VCEO
350V
Ic Max
500mA
Pd Max
300mW
hFE Gain
30
Quick Reference
The DN350T05-7 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 350V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 350V | Max breakdown voltage |
| Collector Current (Ic) | 500mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| DC Current Gain (hFE) | 30 | Base signal amplification ratio |
| Transition Frequency (fT) | 50MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 300mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 5V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -65℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| CMPTA42E TR PBFREE | NPN | SOT-23 | 350V | 500mA | 50 | 350mW | Central 📄 PDF |
| MMBT6517BEC | NPN | SOT-23 | 350V | 500mA | 200 | 200mW | EIC 📄 PDF |
| STR1550 | NPN | SOT-23 | 500V | 500mA | 100 | 500mW | ST 📄 PDF |