MMBT6517BEC Datasheet & Equivalents

NPN SOT-23 General Purpose EIC
VCEO
350V
Ic Max
500mA
Pd Max
200mW
hFE Gain
200

Quick Reference

The MMBT6517BEC is a NPN bipolar junction transistor in a SOT-23 package, manufactured by EIC. It supports a breakdown voltage of 350V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerEICOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)350VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
CMPTA42E TR PBFREE NPN SOT-23 350V 500mA 50 350mW
DN350T05-7 NPN SOT-23 350V 500mA 30 300mW
STR1550 NPN SOT-23 500V 500mA 100 500mW