MMBTA42 Datasheet & Equivalents

NPN SOT-23 General Purpose JSMSEMI
VCEO
200V
Ic Max
500mA
Pd Max
350mW
hFE Gain
40

Quick Reference

The MMBTA42 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by JSMSEMI. It supports a breakdown voltage of 200V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)200VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)40Base signal amplification ratio
Transition Frequency (fT)50MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTA43 NPN SOT-23 200V 500mA 40 350mW
MMBTA43 NPN SOT-23 200V 500mA 40 350mW
MMBTA42-7-F NPN SOT-23 300V 500mA 40 300mW
MMBTA42Q-7-F NPN SOT-23 300V 500mA 40 300mW
LMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
MMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT1G NPN SOT-23 300V 500mA 25 225mW
SMMBTA42LT3G NPN SOT-23 300V 500mA 25 225mW
S-MMBTA42LT1G NPN SOT-23 300V 500mA 60 350mW
FMMT497TA NPN SOT-23 300V 500mA 80 500mW
CMPTA42E TR PBFREE NPN SOT-23 350V 500mA 50 350mW
DN350T05-7 NPN SOT-23 350V 500mA 30 300mW
MMBT6517BEC NPN SOT-23 350V 500mA 200 200mW
STR1550 NPN SOT-23 500V 500mA 100 500mW