MJ1000 Datasheet & Equivalents

NPN TO-3 High Power SPTECH
VCEO
60V
Ic Max
10A
Pd Max
90W
hFE Gain
1000

Quick Reference

The MJ1000 is a NPN bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 60V and continuous collector current of 10A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)10AMax current handling
Power Dissipation (Pd)90WMax thermal limit
DC Current Gain (hFE)1000Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)4VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current1mALeakage current when OFF
Operating Temp-55โ„ƒ~+200โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJ3055 NPN TO-3 60V 10A 70 117W
2SD211 NPN TO-3 60V 10A 30 100W
2N3055A NPN TO-3 60V 15A 70 115W
2N3055 NPN TO-3 60V 15A 70 115W
2N3055 NPN TO-3 60V 15A 5 115W
2N3772 NPN TO-3 60V 20A 60 150W
MJ3001 NPN TO-3 80V 10A - 150W
2SD750 NPN TO-3 80V 15A 120 100W
2N5886 NPN TO-3 80V 25A 100 200W
2N5038 NPN TO-3 90V 20A 100 140W
BD317 NPN TO-3 100V 16A 25 200W
2N6338 NPN TO-3 100V 25A 120 200W
2SC1116 NPN TO-3 120V 10A 50 100W
MJ15015 NPN TO-3 120V 15A 70 180W
MJ15015G NPN TO-3 120V 15A 10 180W
BDY58 NPN TO-3 125V 25A 60 175W
2N3773 NPN TO-3 140V 16A 60 150W
2N5631 NPN TO-3 140V 16A 60 200W
MJ15003G NPN TO-3 140V 20A 150 250W