MJ15015G Datasheet & Equivalents

NPN TO-3 High Power onsemi
VCEO
120V
Ic Max
15A
Pd Max
180W
hFE Gain
10

Quick Reference

The MJ15015G is a NPN bipolar junction transistor in a TO-3 package, manufactured by onsemi. It supports a breakdown voltage of 120V and continuous collector current of 15A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)120VMax breakdown voltage
Collector Current (Ic)15AMax current handling
Power Dissipation (Pd)180WMax thermal limit
DC Current Gain (hFE)10Base signal amplification ratio
Transition Frequency (fT)6MHzMax operating frequency
Saturation Voltage (VCEsat)5VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-65โ„ƒ~+200โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJ15015 NPN TO-3 120V 15A 70 180W
MJ11016 NPN TO-3 120V 30A 1000 200W
BDY58 NPN TO-3 125V 25A 60 175W
2N3773 NPN TO-3 140V 16A 60 150W
2N5631 NPN TO-3 140V 16A 60 200W
MJ15003G NPN TO-3 140V 20A 150 250W
2SD424 NPN TO-3 180V 15A 140 150W
MJ15022G NPN TO-3 200V 16A 15 250W
MJ15026 NPN TO-3 200V 16A 150 250W
MJ15024G NPN TO-3 250V 16A 15 250W
MJ21196G NPN TO-3 250V 16A 25 250W
MJ15024 NPN TO-3 250V 16A 60 250W
MJ21194 NPN TO-3 250V 16A 75 250W