2N5631 Datasheet & Equivalents

NPN TO-3 High Power SPTECH
VCEO
140V
Ic Max
16A
Pd Max
200W
hFE Gain
60

Quick Reference

The 2N5631 is a NPN bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 140V and continuous collector current of 16A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)140VMax breakdown voltage
Collector Current (Ic)16AMax current handling
Power Dissipation (Pd)200WMax thermal limit
DC Current Gain (hFE)60Base signal amplification ratio
Transition Frequency (fT)1MHzMax operating frequency
Saturation Voltage (VCEsat)2VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current2mALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2N3773 NPN TO-3 140V 16A 60 150W
MJ15003G NPN TO-3 140V 20A 150 250W
MJ15022G NPN TO-3 200V 16A 15 250W
MJ15026 NPN TO-3 200V 16A 150 250W
BUV21G NPN TO-3 200V 40A 20 250W
MJ15024 NPN TO-3 250V 16A 60 250W
MJ21194 NPN TO-3 250V 16A 75 250W
MJ21196G NPN TO-3 250V 16A 25 250W
MJ15024G NPN TO-3 250V 16A 15 250W