BUV21G Datasheet & Equivalents
NPN
TO-3
High Power
onsemi
VCEO
200V
Ic Max
40A
Pd Max
250W
hFE Gain
20
Quick Reference
The BUV21G is a NPN bipolar junction transistor in a TO-3 package, manufactured by onsemi. It supports a breakdown voltage of 200V and continuous collector current of 40A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 200V | Max breakdown voltage |
| Collector Current (Ic) | 40A | Max current handling |
| Power Dissipation (Pd) | 250W | Max thermal limit |
| DC Current Gain (hFE) | 20 | Base signal amplification ratio |
| Transition Frequency (fT) | 8MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -65℃~+200℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||