MJ15022G Datasheet & Equivalents

NPN TO-3 High Power onsemi
VCEO
200V
Ic Max
16A
Pd Max
250W
hFE Gain
15

Quick Reference

The MJ15022G is a NPN bipolar junction transistor in a TO-3 package, manufactured by onsemi. It supports a breakdown voltage of 200V and continuous collector current of 16A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)200VMax breakdown voltage
Collector Current (Ic)16AMax current handling
Power Dissipation (Pd)250WMax thermal limit
DC Current Gain (hFE)15Base signal amplification ratio
Transition Frequency (fT)4MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-65โ„ƒ~+200โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJ15026 NPN TO-3 200V 16A 150 250W
BUV21G NPN TO-3 200V 40A 20 250W
MJ15024G NPN TO-3 250V 16A 15 250W
MJ21196G NPN TO-3 250V 16A 25 250W
MJ15024 NPN TO-3 250V 16A 60 250W
MJ21194 NPN TO-3 250V 16A 75 250W
2SC3058 NPN TO-3 400V 30A 40 200W
2KW8629 NPN TO-3 500V 20A 60 150W