2SD211 Datasheet & Equivalents

NPN TO-3 High Power SPTECH
VCEO
60V
Ic Max
10A
Pd Max
100W
hFE Gain
30

Quick Reference

The 2SD211 is a NPN bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 60V and continuous collector current of 10A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)10AMax current handling
Power Dissipation (Pd)100WMax thermal limit
DC Current Gain (hFE)30Base signal amplification ratio
Transition Frequency (fT)8MHzMax operating frequency
Saturation Voltage (VCEsat)1.5VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJ3055 NPN TO-3 60V 10A 70 117W
MJ1000 NPN TO-3 60V 10A 1000 90W
2N3055 NPN TO-3 60V 15A 5 115W
2N3055A NPN TO-3 60V 15A 70 115W
2N3055 NPN TO-3 60V 15A 70 115W
2N3772 NPN TO-3 60V 20A 60 150W
MJ3001 NPN TO-3 80V 10A - 150W
2SD750 NPN TO-3 80V 15A 120 100W
2N5886 NPN TO-3 80V 25A 100 200W
2N5038 NPN TO-3 90V 20A 100 140W
BD317 NPN TO-3 100V 16A 25 200W
2N6338 NPN TO-3 100V 25A 120 200W
2SC1116 NPN TO-3 120V 10A 50 100W
MJ15015G NPN TO-3 120V 15A 10 180W
MJ15015 NPN TO-3 120V 15A 70 180W
BDY58 NPN TO-3 125V 25A 60 175W
2N3773 NPN TO-3 140V 16A 60 150W
2N5631 NPN TO-3 140V 16A 60 200W
MJ15003G NPN TO-3 140V 20A 150 250W