BD317 Datasheet & Equivalents

NPN TO-3 High Power SPTECH
VCEO
100V
Ic Max
16A
Pd Max
200W
hFE Gain
25
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Quick Reference

The BD317 is a NPN bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 100V and continuous collector current of 16A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)16AMax current handling
Power Dissipation (Pd)200WMax thermal limit
DC Current Gain (hFE)25Base signal amplification ratio
Transition Frequency (fT)1MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current1mALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2N6338 NPN TO-3 100V 25A 120 200W
SPTECH 📄 PDF
MJ11016 NPN TO-3 120V 30A 1000 200W
SPTECH 📄 PDF
BDY58 NPN TO-3 125V 25A 60 175W
SPTECH 📄 PDF
2N3773 NPN TO-3 140V 16A 60 150W
SPTECH 📄 PDF
2N5631 NPN TO-3 140V 16A 60 200W
SPTECH 📄 PDF
MJ15003G NPN TO-3 140V 20A 150 250W
onsemi 📄 PDF
MJ15022G NPN TO-3 200V 16A 15 250W
onsemi 📄 PDF
MJ15026 NPN TO-3 200V 16A 150 250W
SPTECH 📄 PDF
BUV21G NPN TO-3 200V 40A 20 250W
onsemi 📄 PDF
MJ21196G NPN TO-3 250V 16A 25 250W
onsemi 📄 PDF
MJ15024G NPN TO-3 250V 16A 15 250W
onsemi 📄 PDF
MJ15024 NPN TO-3 250V 16A 60 250W
SPTECH 📄 PDF
MJ21194 NPN TO-3 250V 16A 75 250W
SPTECH 📄 PDF
NPN Bipolar Transistors High-Power NPN BJTs