2SC1116 Datasheet & Equivalents

NPN TO-3 High Power SPTECH
VCEO
120V
Ic Max
10A
Pd Max
100W
hFE Gain
50

Quick Reference

The 2SC1116 is a NPN bipolar junction transistor in a TO-3 package, manufactured by SPTECH. It supports a breakdown voltage of 120V and continuous collector current of 10A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)120VMax breakdown voltage
Collector Current (Ic)10AMax current handling
Power Dissipation (Pd)100WMax thermal limit
DC Current Gain (hFE)50Base signal amplification ratio
Transition Frequency (fT)10MHzMax operating frequency
Saturation Voltage (VCEsat)2VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJ15015 NPN TO-3 120V 15A 70 180W
MJ15015G NPN TO-3 120V 15A 10 180W
BDY58 NPN TO-3 125V 25A 60 175W
2N3773 NPN TO-3 140V 16A 60 150W
2N5631 NPN TO-3 140V 16A 60 200W
MJ15003G NPN TO-3 140V 20A 150 250W
2SD424 NPN TO-3 180V 15A 140 150W
MJ15022G NPN TO-3 200V 16A 15 250W
MJ15026 NPN TO-3 200V 16A 150 250W
MJ15024 NPN TO-3 250V 16A 60 250W
MJ21194 NPN TO-3 250V 16A 75 250W
MJ21196G NPN TO-3 250V 16A 25 250W
MJ15024G NPN TO-3 250V 16A 15 250W