FDV301N MOSFET Datasheet & Equivalents (R+O, SOT-23)

N-Channel SOT-23 Logic-Level R+O
Vds Max
25V
Id Max
220mA
Rds(on)
4Ω@4.5V;5Ω@2.7V
Vgs(th)
800mV

Quick Reference

The FDV301N is an N-Channel MOSFET in a SOT-23 package, manufactured by R+O. It supports a drain-source breakdown voltage of 25V and a continuous drain current of 220mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)25VMax breakdown voltage
Continuous Drain Current (Id)220mAMax current handling
Power Dissipation (Pd)350mWMax thermal limit
On-Resistance (Rds(on))4Ω@4.5V;5Ω@2.7VResistance when turned fully on
Gate Threshold (Vgs(th))800mVVoltage required to turn on
Gate Charge (Qg)490pC@4.5VSwitching energy
Input Capacitance (Ciss)9.5pFInternal gate capacitance
Output Capacitance (Coss)6pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
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BSS138P N-Channel SOT-23 60V 380mA 2.8Ω@10V 1V