BSH103,215 MOSFET Datasheet & Specifications

N-Channel SOT-23 Logic-Level Nexperia
Vds Max
30V
Id Max
850mA
Rds(on)
500mΩ@2.5V
Vgs(th)
400mV

Quick Reference

The BSH103,215 is an N-Channel MOSFET in a SOT-23 package, manufactured by Nexperia. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 850mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)850mAMax current handling
Power Dissipation (Pd)500mWMax thermal limit
On-Resistance (Rds(on))500mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))400mVVoltage required to turn on
Gate Charge (Qg)2.1nC@4.5VSwitching energy
Input Capacitance (Ciss)83pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
MDD3400 N-Channel SOT-23 30V 5.8A 20mΩ@10V 800mV
MDD(Microdiod... 📄 PDF
HL3400 N-Channel SOT-23 30V 5.6A 21mΩ@10V
25mΩ@4.5V
33mΩ@2.5V
900mV
FS3400MLT1 A09T N-Channel SOT-23 30V 5.8A 25mΩ@4.5V 900mV
FOSAN 📄 PDF
AO3400 N-Channel SOT-23 30V 5.8A 25mΩ@4.5V 900mV
FOSAN 📄 PDF
AO3400-TD N-Channel SOT-23 30V 5.8A 28mΩ@10V 900mV
TDSEMIC 📄 PDF
PMV40UN2R N-Channel SOT-23 30V 3.7A 44mΩ@4.5V 900mV
Nexperia 📄 PDF
IRLML2803TRPBF N-Channel SOT-23 30V 1.2A 250mΩ@10V 400mV
Infineon 📄 PDF