FDN337N MOSFET Datasheet & Specifications (FUXINSEMI, SOT-23)

N-Channel SOT-23 Logic-Level FUXINSEMI
Vds Max
30V
Id Max
2.2A
Rds(on)
65mΩ@4.5V
Vgs(th)
1.3V

Quick Reference

The FDN337N is an N-Channel MOSFET in a SOT-23 package, manufactured by FUXINSEMI. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 2.2A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerFUXINSEMIOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)2.2AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
On-Resistance (Rds(on))65mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.3VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)300pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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