DOD50P03 MOSFET Datasheet & Specifications
P-Channel
TO-252
Logic-Level
DOINGTER
Vds Max
30V
Id Max
50A
Rds(on)
10mΩ@10V
Vgs(th)
2.5V
Quick Reference
The DOD50P03 is an P-Channel MOSFET in a TO-252 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 50A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 10mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 40nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.35nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SP30P03TH | P-Channel | TO-252 | 30V | 100A | 3.4mΩ@10V 4.8mΩ@4.5V |
1.6V | Siliup 📄 PDF |
| ASDM30P100KQ-R | P-Channel | TO-252 | 30V | 100A | 6mΩ@10V | 2.5V | ASDsemi 📄 PDF |
| IPD068P03L3G | P-Channel | TO-252 | 30V | 70A | 6.8mΩ@10V | 2V | Infineon 📄 PDF |
| SQD40031EL_GE3-VB | P-Channel | TO-252 | 30V | 100A | 7mΩ@4.5V | 3V | VBsemi Elec 📄 PDF |
| AOD403 | P-Channel | TO-252 | 30V | 62A | 8mΩ@10V 11.5mΩ@4.5V |
1.5V | ElecSuper 📄 PDF |
| WSF90P03 | P-Channel | TO-252 | 30V | 85A | 8mΩ@4.5V | 2.5V | Winsok Semicon 📄 PDF |
| 70P03 | P-Channel | TO-252 | 30V | 65A | 14mΩ@10V | 2.5V | HL 📄 PDF |
| WSF70P03 | P-Channel | TO-252 | 30V | 65A | 16mΩ@4.5V | 2.5V | Winsok Semicon 📄 PDF |
| HSU4119 | P-Channel | TO-252 | 40V | 120A | 3.5mΩ@10V 4.5mΩ@4.5V |
1V | HUASHUO 📄 PDF |
| IPD90P04P4L04ATMA2 | P-Channel | TO-252 | 40V | 90A | 4.3mΩ@10V | 2.2V | Infineon 📄 PDF |
| SP40P04TH | P-Channel | TO-252 | 40V | 90A | 4.8mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| AP80P04K | P-Channel | TO-252 | 40V | 80A | 5.8mΩ@10V 7.5mΩ@4.5V |
1.6V | ALLPOWER 📄 PDF |
| DOD95P04 | P-Channel | TO-252 | 40V | 95A | 6mΩ@10V | 2.2V | DOINGTER 📄 PDF |
| SUD50P04-08-GE3 | P-Channel | TO-252 | 40V | 50A | 8.1mΩ@10V | 2.5V | VISHAY 📄 PDF |
| IPD50P04P4L11(UMW) | P-Channel | TO-252 | 40V | 50A | 8.2mΩ@10V | 1.7V | UMW 📄 PDF |
| SQD40081EL_GE3 | P-Channel | TO-252 | 40V | 50A | 8.5mΩ@10V | 2.5V | VISHAY 📄 PDF |
| STU417S | P-Channel | TO-252 | 40V | 50A | 10.5mΩ@10V 14.2mΩ@4.5V |
1.6V | MSKSEMI 📄 PDF |
| IPD50P04P4L11 | P-Channel | TO-252 | 40V | 50A | 10.6mΩ@10V | 2.2V | Infineon 📄 PDF |
| NCE40P70K(TOKMAS) | P-Channel | TO-252 | 40V | 65A | 11mΩ@10V | 2.5V | Tokmas 📄 PDF |
| APM4050PUC-TRL-VB | P-Channel | TO-252 | 40V | 50A | 12mΩ@10V | 1V | VBsemi Elec 📄 PDF |