IPD068P03L3G MOSFET Datasheet & Specifications

P-Channel TO-252 Logic-Level Infineon
Vds Max
30V
Id Max
70A
Rds(on)
6.8mΩ@10V
Vgs(th)
2V

Quick Reference

The IPD068P03L3G is an P-Channel MOSFET in a TO-252 package, manufactured by Infineon. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 70A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerInfineonOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)70AMax current handling
Power Dissipation (Pd)100WMax thermal limit
On-Resistance (Rds(on))6.8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2VVoltage required to turn on
Gate Charge (Qg)91nC@10VSwitching energy
Input Capacitance (Ciss)7.72nFInternal gate capacitance
Output Capacitance (Coss)3.14nFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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SP30P03TH P-Channel TO-252 30V 100A 3.4mΩ@10V
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IPD90P04P4L04ATMA2 P-Channel TO-252 40V 90A 4.3mΩ@10V 2.2V
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SP40P04TH P-Channel TO-252 40V 90A 4.8mΩ@10V
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AP80P04K P-Channel TO-252 40V 80A 5.8mΩ@10V
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DOD95P04 P-Channel TO-252 40V 95A 6mΩ@10V 2.2V
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HSU6119 P-Channel TO-252 60V 80A 6mΩ@10V 2V
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OSD80P06T P-Channel TO-252 60V 80A 20mΩ@10V 2.1V