BU406 Datasheet & Equivalents

NPN TO-220 High Power OSEN
VCEO
200V
Ic Max
7A
Pd Max
60W
hFE Gain
85

Quick Reference

The BU406 is a NPN bipolar junction transistor in a TO-220 package, manufactured by OSEN. It supports a breakdown voltage of 200V and continuous collector current of 7A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerOSENOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)200VMax breakdown voltage
Collector Current (Ic)7AMax current handling
Power Dissipation (Pd)60WMax thermal limit
DC Current Gain (hFE)85Base signal amplification ratio
Transition Frequency (fT)10MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current10uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BU406-JSM NPN TO-220 200V 7A 100 60W
2SD884 NPN TO-220 200V 7A 45 40W
BU408 NPN TO-220 200V 7A 35 60W
MJE15032G NPN TO-220 250V 8A 70 50W
MJE15032G NPN TO-220 250V 8A 70 50W
BU941ZT NPN TO-220 350V 15A 300 150W
2SC2335 NPN TO-220 400V 7A 80 40W
2SC3039 NPN TO-220 400V 7A 50 50W
3DD13007 NPN TO-220 400V 8A 40 2W
luJing
MJE13007 NPN TO-220 400V 8A 40 80W
YFW13007AT NPN TO-220 400V 8A 40 2W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13006-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
NTE2312-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13007G NPN TO-220 400V 8A 5 80W
YFW13009AT NPN TO-220 400V 12A 40 3W
MJE13009-2 NPN TO-220 400V 12A 30 100W
13009 NPN TO-220 410V 12A 35 80W
GOODWORK ๐Ÿ“„ PDF