MJE13007G Datasheet & Equivalents

NPN TO-220 High Power onsemi
VCEO
400V
Ic Max
8A
Pd Max
80W
hFE Gain
5

Quick Reference

The MJE13007G is a NPN bipolar junction transistor in a TO-220 package, manufactured by onsemi. It supports a breakdown voltage of 400V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)400VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)80WMax thermal limit
DC Current Gain (hFE)5Base signal amplification ratio
Transition Frequency (fT)14MHzMax operating frequency
Saturation Voltage (VCEsat)3VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)9VMax emitter-base breakdown
Collector Cutoff Current100uALeakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13006-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
NTE2312-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
3DD13007 NPN TO-220 400V 8A 40 2W
luJing
MJE13007 NPN TO-220 400V 8A 40 80W
YFW13007AT NPN TO-220 400V 8A 40 2W
MJE13009-2 NPN TO-220 400V 12A 30 100W
YFW13009AT NPN TO-220 400V 12A 40 3W
13009 NPN TO-220 410V 12A 35 80W
GOODWORK ๐Ÿ“„ PDF
ST13009 NPN TO-220 700V 12A 15 100W