NTE2312-HXY Datasheet & Equivalents

NPN TO-220 High Power HXY MOSFET
VCEO
400V
Ic Max
8A
Pd Max
80W
hFE Gain
10
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Quick Reference

The NTE2312-HXY is a NPN bipolar junction transistor in a TO-220 package, manufactured by HXY MOSFET. It supports a breakdown voltage of 400V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)400VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)80WMax thermal limit
DC Current Gain (hFE)10Base signal amplification ratio
Transition Frequency (fT)4MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 10 80W
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luJing
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YFW13007AT NPN TO-220 400V 8A 40 2W
YFW 📄 PDF
MJE13009-2 NPN TO-220 400V 12A 30 100W
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YFW13009AT NPN TO-220 400V 12A 40 3W
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13009 NPN TO-220 410V 12A 35 80W
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ST13009 NPN TO-220 700V 12A 15 100W
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NPN Bipolar Transistors High-Power NPN BJTs High-Voltage NPN BJTs TO-220 NPN BJTs