MJE15032G Datasheet & Equivalents

NPN TO-220 High Power Minos
VCEO
250V
Ic Max
8A
Pd Max
50W
hFE Gain
70

Quick Reference

The MJE15032G is a NPN bipolar junction transistor in a TO-220 package, manufactured by Minos. It supports a breakdown voltage of 250V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMinosOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)250VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)50WMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)30MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current1mALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BU941ZT NPN TO-220 350V 15A 300 150W
3DD13007 NPN TO-220 400V 8A 40 2W
luJing
MJE13007 NPN TO-220 400V 8A 40 80W
YFW13007AT NPN TO-220 400V 8A 40 2W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13006-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
NTE2312-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13007G NPN TO-220 400V 8A 5 80W
YFW13009AT NPN TO-220 400V 12A 40 3W
MJE13009-2 NPN TO-220 400V 12A 30 100W
13009 NPN TO-220 410V 12A 35 80W
GOODWORK ๐Ÿ“„ PDF