MJE15032G Datasheet & Equivalents

NPN TO-220 High Power onsemi
VCEO
250V
Ic Max
8A
Pd Max
50W
hFE Gain
70

Quick Reference

The MJE15032G is a NPN bipolar junction transistor in a TO-220 package, manufactured by onsemi. It supports a breakdown voltage of 250V and continuous collector current of 8A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)250VMax breakdown voltage
Collector Current (Ic)8AMax current handling
Power Dissipation (Pd)50WMax thermal limit
DC Current Gain (hFE)70Base signal amplification ratio
Transition Frequency (fT)30MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-65โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BU941ZT NPN TO-220 350V 15A 300 150W
3DD13007 NPN TO-220 400V 8A 40 2W
luJing
MJE13007 NPN TO-220 400V 8A 40 80W
YFW13007AT NPN TO-220 400V 8A 40 2W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13006-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
NTE2312-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13007G NPN TO-220 400V 8A 5 80W
YFW13009AT NPN TO-220 400V 12A 40 3W
MJE13009-2 NPN TO-220 400V 12A 30 100W
13009 NPN TO-220 410V 12A 35 80W
GOODWORK ๐Ÿ“„ PDF