BU406-JSM Datasheet & Equivalents

NPN TO-220 High Power JSMSEMI
VCEO
200V
Ic Max
7A
Pd Max
60W
hFE Gain
100

Quick Reference

The BU406-JSM is a NPN bipolar junction transistor in a TO-220 package, manufactured by JSMSEMI. It supports a breakdown voltage of 200V and continuous collector current of 7A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageTO-220Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)200VMax breakdown voltage
Collector Current (Ic)7AMax current handling
Power Dissipation (Pd)60WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)10MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current5uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BU406 NPN TO-220 200V 7A 85 60W
BU406 NPN TO-220 200V 7A 120 60W
BU406 NPN TO-220 200V 7A 50 2W
2SD884 NPN TO-220 200V 7A 45 40W
BU408 NPN TO-220 200V 7A 35 60W
MJE15032G NPN TO-220 250V 8A 70 50W
MJE15032G NPN TO-220 250V 8A 70 50W
BU941ZT NPN TO-220 350V 15A 300 150W
2SC2335 NPN TO-220 400V 7A 80 40W
2SC3039 NPN TO-220 400V 7A 50 50W
3DD13007 NPN TO-220 400V 8A 40 2W
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MJE13007 NPN TO-220 400V 8A 40 80W
YFW13007AT NPN TO-220 400V 8A 40 2W
FJP13007H1TU-F080-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
KSE13007H2SMTU-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13006-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
NTE2312-HXY NPN TO-220 400V 8A 10 80W
HXY MOSFET ๐Ÿ“„ PDF
MJE13007G NPN TO-220 400V 8A 5 80W
YFW13009AT NPN TO-220 400V 12A 40 3W
MJE13009-2 NPN TO-220 400V 12A 30 100W