BCW65CLT1G Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
32V
Ic Max
800mA
Pd Max
300mW
hFE Gain
80

Quick Reference

The BCW65CLT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 32V and continuous collector current of 800mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)32VMax breakdown voltage
Collector Current (Ic)800mAMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)700mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current20nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
BCW65ALT1G NPN SOT-23 32V 800mA 100 225mW
2SD1781KT146Q NPN SOT-23 32V 800mA 120 200mW
BSR14 NPN SOT-23 40V 800mA 35 350mW
FMMT491ATA NPN SOT-23 40V 1A 200 500mW
FMMT491ATC NPN SOT-23 40V 1A 200 500mW
ZXTN2040FTA NPN SOT-23 40V 1A 200 310mW
PBSS4140T NPN SOT-23 40V 1A 300 450mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 40V 1.5A 400 300mW
SS8050 NPN SOT-23 40V 2A - 300mW
GOODWORK
PBSS4240 NPN SOT-23 40V 2A 200 460mW
NSS40201LT1G NPN SOT-23 40V 2A 200 300mW
SS30101-Q NPN SOT-23 40V 2A 300 730mW
DSS4240T-7 NPN SOT-23 40V 2A 300 730mW
ZXTN4240F-7 NPN SOT-23 45V 800mA 50 225mW
BCW66GLT1G NPN SOT-23 45V 800mA 250 200mW
BCW66H(RANGE:250-630) NPN SOT-23 45V 800mA 250 310mW
BCW66HTA NPN SOT-23 50V 1.25A 200 500mW
FMMTL619TA NPN SOT-23 50V 1.5A 100 225mW
LH8050QLT1G NPN SOT-23 50V 2A 100 300mW
Nexperia ๐Ÿ“„ PDF
PBSS4350T NPN SOT-23 50V 2A 100 350mW