FMMTL619TA Datasheet & Equivalents

NPN SOT-23 General Purpose DIODES
VCEO
50V
Ic Max
1.25A
Pd Max
500mW
hFE Gain
200

Quick Reference

The FMMTL619TA is a NPN bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 50V and continuous collector current of 1.25A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)1.25AMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)180MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
LH8050QLT1G NPN SOT-23 50V 1.5A 100 225mW
FMMT619TA NPN SOT-23 50V 2A 200 625mW
FMMT619TC NPN SOT-23 50V 2A 200 625mW
FMMT619 NPN SOT-23 50V 2A 200 350mW
2SC2655G-Y-AE3-R NPN SOT-23 50V 2A 120 350mW
DSS4240T-7-HXY NPN SOT-23 50V 2A 300 625mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT4240-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619-JSM NPN SOT-23 50V 2A 300 625mW
FMMT619TA-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4350T NPN SOT-23 50V 2A 100 300mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4350T-HXY NPN SOT-23 50V 2A 300 250mW
GOODWORK ๐Ÿ“„ PDF
FMMT619 NPN SOT-23 50V 2A 100 350mW
FMMT619 NPN SOT-23 50V 2A - 300mW
GOODWORK ๐Ÿ“„ PDF
PBSS4350T-GK NPN SOT-23 60V 2A 100 540mW
NSS60201LT1G NPN SOT-23 80V 1.5A 60 625mW
FMMT620TA NPN SOT-23 100V 2A 150 710mW
NSS1C201LT1G NPN SOT-23 100V 2.5A 300 1.25W
ZXTN25100DFHTA NPN SOT-23 100V 3A 50 1.25W