FMMT619 Datasheet & Equivalents

NPN SOT-23 General Purpose BORN
VCEO
50V
Ic Max
2A
Pd Max
350mW
hFE Gain
100

Quick Reference

The FMMT619 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by BORN. It supports a breakdown voltage of 50V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerBORNOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)220mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100pALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
PBSS4350T NPN SOT-23 50V 2A 100 300mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 50V 2A 120 350mW
2SC2655G-Y-AE3-R NPN SOT-23 50V 2A 200 625mW
FMMT619TA NPN SOT-23 50V 2A 200 625mW
FMMT619TC NPN SOT-23 50V 2A - 300mW
GOODWORK ๐Ÿ“„ PDF
PBSS4350T-GK NPN SOT-23 50V 2A 300 625mW
HXY MOSFET ๐Ÿ“„ PDF
DSS4240T-7-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT4240-HXY NPN SOT-23 50V 2A 300 625mW
FMMT619-JSM NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619TA-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4350T-HXY NPN SOT-23 50V 4A 300 1.25W
ZXTN25050DFHTA NPN SOT-23 50V 5A 200 1.2W
ZXTN2031FTA NPN SOT-23 60V 2A 100 540mW
NSS60201LT1G NPN SOT-23 60V 5A 100 1W
ZXTN2018FQTA NPN SOT-23 60V 5A 100 1.56W
ZXTN2018FTA NPN SOT-23 100V 2A 150 710mW
NSS1C201LT1G NPN SOT-23 100V 2.5A 300 1.25W
ZXTN25100DFHTA NPN SOT-23 100V 3A 50 1.25W
ZXTN25100BFHTA NPN SOT-23 100V 4A 100 1.2W