2SC2655G-Y-AE3-R Datasheet & Equivalents

NPN SOT-23 General Purpose UTC
VCEO
50V
Ic Max
2A
Pd Max
350mW
hFE Gain
120

Quick Reference

The 2SC2655G-Y-AE3-R is a NPN bipolar junction transistor in a SOT-23 package, manufactured by UTC. It supports a breakdown voltage of 50V and continuous collector current of 2A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)2AMax current handling
Power Dissipation (Pd)350mWMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
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FMMT619 NPN SOT-23 50V 2A 200 625mW
FMMT619TA NPN SOT-23 50V 2A 200 625mW
FMMT619TC NPN SOT-23 50V 2A 200 350mW
FMMT619 NPN SOT-23 50V 2A - 300mW
GOODWORK ๐Ÿ“„ PDF
PBSS4350T-GK NPN SOT-23 50V 2A 300 625mW
HXY MOSFET ๐Ÿ“„ PDF
DSS4240T-7-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT4240-HXY NPN SOT-23 50V 2A 300 625mW
FMMT619-JSM NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619TA-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4350T-HXY NPN SOT-23 50V 2A 300 250mW
GOODWORK ๐Ÿ“„ PDF
FMMT619 NPN SOT-23 50V 4A 300 1.25W
ZXTN25050DFHTA NPN SOT-23 50V 5A 200 1.2W
ZXTN2031FTA NPN SOT-23 60V 2A 100 540mW
NSS60201LT1G NPN SOT-23 60V 5A 100 1W
ZXTN2018FQTA NPN SOT-23 60V 5A 100 1.56W
ZXTN2018FTA NPN SOT-23 100V 2A 150 710mW
NSS1C201LT1G NPN SOT-23 100V 2.5A 300 1.25W
ZXTN25100DFHTA NPN SOT-23 100V 3A 50 1.25W