ZXTN25050DFHTA Datasheet & Equivalents
NPN
SOT-23
General Purpose
DIODES
VCEO
50V
Ic Max
4A
Pd Max
1.25W
hFE Gain
300
Quick Reference
The ZXTN25050DFHTA is a NPN bipolar junction transistor in a SOT-23 package, manufactured by DIODES. It supports a breakdown voltage of 50V and continuous collector current of 4A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-23 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 50V | Max breakdown voltage |
| Collector Current (Ic) | 4A | Max current handling |
| Power Dissipation (Pd) | 1.25W | Max thermal limit |
| DC Current Gain (hFE) | 300 | Base signal amplification ratio |
| Transition Frequency (fT) | 200MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 60mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 50nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTN2031FTA | NPN | SOT-23 | 50V | 5A | 200 | 1.2W | DIODES 📄 PDF |
| ZXTN2018FQTA | NPN | SOT-23 | 60V | 5A | 100 | 1W | DIODES 📄 PDF |
| ZXTN2018FTA | NPN | SOT-23 | 60V | 5A | 100 | 1.56W | DIODES 📄 PDF |
| ZXTN2020FTA | NPN | SOT-23 | 100V | 4A | 100 | 1.2W | DIODES 📄 PDF |