SS8050 Datasheet & Equivalents

NPN SOT-23 General Purpose XCH
VCEO
40V
Ic Max
1.5A
Pd Max
300mW
hFE Gain
400

Quick Reference

The SS8050 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by XCH. It supports a breakdown voltage of 40V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerXCHOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)1.5AMax current handling
Power Dissipation (Pd)300mWMax thermal limit
DC Current Gain (hFE)400Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
DSS4240T-7 NPN SOT-23 40V 2A 300 730mW
ZXTN4240F-7 NPN SOT-23 40V 2A 300 730mW
NSS40201LT1G NPN SOT-23 40V 2A 200 460mW
SS30101-Q NPN SOT-23 40V 2A 200 300mW
PBSS4240 NPN SOT-23 40V 2A - 300mW
GOODWORK
LH8050QLT1G NPN SOT-23 50V 1.5A 100 225mW
DSS4240T-7-HXY NPN SOT-23 50V 2A 300 625mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT4240-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619-JSM NPN SOT-23 50V 2A 300 625mW
FMMT619TA-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4350T-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619 NPN SOT-23 50V 2A 300 250mW
GOODWORK ๐Ÿ“„ PDF
FMMT619TA NPN SOT-23 50V 2A 200 625mW
FMMT619TC NPN SOT-23 50V 2A 200 625mW
FMMT619 NPN SOT-23 50V 2A 200 350mW
2SC2655G-Y-AE3-R NPN SOT-23 50V 2A 120 350mW
PBSS4350T NPN SOT-23 50V 2A 100 300mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 50V 2A 100 350mW
FMMT619 NPN SOT-23 50V 2A - 300mW
GOODWORK ๐Ÿ“„ PDF
PBSS4350T-GK NPN SOT-23 60V 2A 100 540mW