BCW65ALT1G Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
32V
Ic Max
800mA
Pd Max
225mW
hFE Gain
100

Quick Reference

The BCW65ALT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 32V and continuous collector current of 800mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)32VMax breakdown voltage
Collector Current (Ic)800mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD1781KT146Q NPN SOT-23 32V 800mA 120 200mW
BCW65CLT1G NPN SOT-23 32V 800mA 80 300mW
BSR14 NPN SOT-23 40V 800mA 35 350mW
FMMT491ATA NPN SOT-23 40V 1A 200 500mW
FMMT491ATC NPN SOT-23 40V 1A 200 500mW
ZXTN2040FTA NPN SOT-23 40V 1A 200 310mW
PBSS4140T NPN SOT-23 40V 1A 300 450mW
Nexperia ๐Ÿ“„ PDF
215 NPN SOT-23 40V 1.5A 400 300mW
SS8050 NPN SOT-23 40V 2A 200 460mW
NSS40201LT1G NPN SOT-23 40V 2A - 300mW
GOODWORK
PBSS4240 NPN SOT-23 40V 2A 200 300mW
SS30101-Q NPN SOT-23 40V 2A 300 730mW
DSS4240T-7 NPN SOT-23 40V 2A 300 730mW
ZXTN4240F-7 NPN SOT-23 45V 800mA 50 225mW
BCW66GLT1G NPN SOT-23 45V 800mA 250 200mW
BCW66H(RANGE:250-630) NPN SOT-23 45V 800mA 250 310mW
BCW66HTA NPN SOT-23 50V 1.25A 200 500mW
FMMTL619TA NPN SOT-23 50V 1.5A 100 225mW
LH8050QLT1G NPN SOT-23 50V 2A 100 300mW
Nexperia ๐Ÿ“„ PDF
PBSS4350T NPN SOT-23 50V 2A 100 350mW