PBSS4140T,215 Datasheet & Equivalents

NPN SOT-23 General Purpose Nexperia
VCEO
40V
Ic Max
1A
Pd Max
450mW
hFE Gain
300

Quick Reference

The PBSS4140T,215 is a NPN bipolar junction transistor in a SOT-23 package, manufactured by Nexperia. It supports a breakdown voltage of 40V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)40VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)450mWMax thermal limit
DC Current Gain (hFE)300Base signal amplification ratio
Transition Frequency (fT)150MHzMax operating frequency
Saturation Voltage (VCEsat)500mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
FMMT491ATA NPN SOT-23 40V 1A 200 500mW
FMMT491ATC NPN SOT-23 40V 1A 200 500mW
ZXTN2040FTA NPN SOT-23 40V 1A 200 310mW
SS8050 NPN SOT-23 40V 1.5A 400 300mW
DSS4240T-7 NPN SOT-23 40V 2A 300 730mW
ZXTN4240F-7 NPN SOT-23 40V 2A 300 730mW
NSS40201LT1G NPN SOT-23 40V 2A 200 460mW
SS30101-Q NPN SOT-23 40V 2A 200 300mW
PBSS4240 NPN SOT-23 40V 2A - 300mW
GOODWORK
FMMTL619TA NPN SOT-23 50V 1.25A 200 500mW
LH8050QLT1G NPN SOT-23 50V 1.5A 100 225mW
DSS4240T-7-HXY NPN SOT-23 50V 2A 300 625mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT4240-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619-JSM NPN SOT-23 50V 2A 300 625mW
FMMT619TA-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
PBSS4350T-HXY NPN SOT-23 50V 2A 300 350mW
HXY MOSFET ๐Ÿ“„ PDF
FMMT619 NPN SOT-23 50V 2A 300 250mW
GOODWORK ๐Ÿ“„ PDF
FMMT619TA NPN SOT-23 50V 2A 200 625mW
FMMT619TC NPN SOT-23 50V 2A 200 625mW
FMMT619 NPN SOT-23 50V 2A 200 350mW