NSV1C201MZ4T1G Transistor Datasheet & Specifications

NPN SOT-223 General Purpose onsemi
VCEO
100V
Ic Max
2A
Pd Max
2W
hFE Gain
150

Quick Reference

The NSV1C201MZ4T1G is a NPN bipolar transistor in a SOT-223 package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the NSV1C201MZ4T1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic2ACollector current
Pd2WPower dissipation
DC Current Gain150hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
FZT855TA NPN SOT-223 150V 5A 3W
FZT653TA NPN SOT-223 100V 2A 3W
FZT853TA NPN SOT-223 100V 6A 3W
PBSS306NZ,135 NPN SOT-223 100V 5.1A 1.7W
CZT31C NPN SOT-223 100V 3A 1W
FZT653QTA NPN SOT-223 100V 2A 1.2W
PZT1816G-S-AA3-R NPN SOT-223 100V 4A 1W
CZT122 NPN SOT-223 100V 5A 1W
5302DG-AA3-R NPN SOT-223 400V 2A 1W