PBSS306NZ,135 Transistor Datasheet & Specifications
NPN
SOT-223
General Purpose
Nexperia
VCEO
100V
Ic Max
5.1A
Pd Max
1.7W
hFE Gain
200
Quick Reference
The PBSS306NZ,135 is a NPN bipolar transistor in a SOT-223 package by Nexperia. This datasheet provides complete specifications including 100V breakdown voltage and 5.1A continuous collector current. Download the PBSS306NZ,135 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 5.1A | Collector current |
| Pd | 1.7W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 110MHz | Transition speed (fT) |
| VCEsat | 27mV | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100nA | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| FZT853TA | NPN | SOT-223 | 100V | 6A | 3W |