FZT853TA Transistor Datasheet & Specifications
NPN
SOT-223
High Power
DIODES
VCEO
100V
Ic Max
6A
Pd Max
3W
hFE Gain
100
Quick Reference
The FZT853TA is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 100V breakdown voltage and 6A continuous collector current. Download the FZT853TA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 100 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 7V | Emitter-Base voltage |
| Cutoff Current | 10nA | Leakage (ICBO) |
| Temp | -55โ~+150โ | Operating temp |