FZT857TA Transistor Datasheet & Specifications

NPN SOT-223 High Power DIODES
VCEO
300V
Ic Max
3.5A
Pd Max
3W
hFE Gain
100
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Quick Reference

The FZT857TA is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 300V breakdown voltage and 3.5A continuous collector current. Download the FZT857TA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic3.5ACollector current
Pd3WPower dissipation
DC Current Gain100hFE / Beta
Frequency80MHzTransition speed (fT)
VCEsat155mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-223 NPN Transistors ›