FZT855TA Transistor Datasheet & Specifications

NPN SOT-223 High Power DIODES
VCEO
150V
Ic Max
5A
Pd Max
3W
hFE Gain
10
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Quick Reference

The FZT855TA is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 150V breakdown voltage and 5A continuous collector current. Download the FZT855TA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO150VBreakdown voltage
Ic5ACollector current
Pd3WPower dissipation
DC Current Gain10hFE / Beta
Frequency10MHzTransition speed (fT)
VCEsat110mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-223 NPN Transistors ›