5302DG-AA3-R Transistor Datasheet & Specifications
NPN
SOT-223
General Purpose
UTC
VCEO
400V
Ic Max
2A
Pd Max
1W
hFE Gain
40
Quick Reference
The 5302DG-AA3-R is a NPN bipolar transistor in a SOT-223 package by UTC. This datasheet provides complete specifications including 400V breakdown voltage and 2A continuous collector current. Download the 5302DG-AA3-R datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | UTC | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 400V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1W | Power dissipation |
| DC Current Gain | 40 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 1.5V | Saturation voltage |
| Vebo | 10V | Emitter-Base voltage |
| Cutoff Current | 1uA | Leakage (ICBO) |
| Temp | - | Operating temp |