NJVNJD2873T4G Transistor Datasheet & Specifications

NPN DPAK High Power onsemi
VCEO
50V
Ic Max
2A
Pd Max
15W
hFE Gain
120

Quick Reference

The NJVNJD2873T4G is a NPN bipolar transistor in a DPAK package by onsemi. This datasheet provides complete specifications including 50V breakdown voltage and 2A continuous collector current. Download the NJVNJD2873T4G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO50VBreakdown voltage
Ic2ACollector current
Pd15WPower dissipation
DC Current Gain120hFE / Beta
Frequency65MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-65โ„ƒ~+175โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
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MJD44H11T4 NPN DPAK 80V 8A 20W
MJD2873-QJ NPN DPAK 50V 2A 1.6W
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MJD44H11A NPN DPAK 80V 8A 20W
NJVMJD31CG NPN DPAK 100V 3A 1.56W
MJD44H11J NPN DPAK 80V 8A 20W