MJD112-1G Transistor Datasheet & Specifications
NPN
DPAK
General Purpose
onsemi
VCEO
100V
Ic Max
2A
Pd Max
1.75W
hFE Gain
1000
Quick Reference
The MJD112-1G is a NPN bipolar transistor in a DPAK package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 2A continuous collector current. Download the MJD112-1G datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 2A | Collector current |
| Pd | 1.75W | Power dissipation |
| DC Current Gain | 1000 | hFE / Beta |
| Frequency | 25MHz | Transition speed (fT) |
| VCEsat | 3V | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 20uA | Leakage (ICBO) |
| Temp | -65℃~+150℃@(Tj) | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD31CAJ | NPN | DPAK | 100V | 3A | 15W |
| NJVMJD122T4G | NPN | DPAK | 100V | 8A | 1.75W |
| MJD41CJ | NPN | DPAK | 100V | 6A | 15W |
| NJVMJD31CG | NPN | DPAK | 100V | 3A | 1.56W |
| MJD31CJ | NPN | DPAK | 100V | 3A | 1.6W |