NJVMJD31CG Transistor Datasheet & Specifications
NPN
DPAK
High Power
onsemi
VCEO
100V
Ic Max
3A
Pd Max
1.56W
hFE Gain
10
Quick Reference
The NJVMJD31CG is a NPN bipolar transistor in a DPAK package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 3A continuous collector current. Download the NJVMJD31CG datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 3A | Collector current |
| Pd | 1.56W | Power dissipation |
| DC Current Gain | 10 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -65℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD31CAJ | NPN | DPAK | 100V | 3A | 15W |
| NJVMJD122T4G | NPN | DPAK | 100V | 8A | 1.75W |
| MJD41CJ | NPN | DPAK | 100V | 6A | 15W |
| MJD31CJ | NPN | DPAK | 100V | 3A | 1.6W |