NJVMJD122T4G Transistor Datasheet & Specifications

NPN DPAK General Purpose onsemi
VCEO
100V
Ic Max
8A
Pd Max
1.75W
hFE Gain
1000
📄 View PDF Datasheet 🛒 Buy from LCSC

Quick Reference

The NJVMJD122T4G is a NPN bipolar transistor in a DPAK package by onsemi. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the NJVMJD122T4G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageDPAKPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic8ACollector current
Pd1.75WPower dissipation
DC Current Gain1000hFE / Beta
Frequency4MHzTransition speed (fT)
VCEsat4VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current10uALeakage (ICBO)
Temp-65℃~+150℃@(Tj)Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all DPAK NPN Transistors ›