MJD41CJ Transistor Datasheet & Specifications
NPN
DPAK
High Power
Nexperia
VCEO
100V
Ic Max
6A
Pd Max
15W
hFE Gain
30
Quick Reference
The MJD41CJ is a NPN bipolar transistor in a DPAK package by Nexperia. This datasheet provides complete specifications including 100V breakdown voltage and 6A continuous collector current. Download the MJD41CJ datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Nexperia | Original Manufacturer |
| Package | DPAK | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 6A | Collector current |
| Pd | 15W | Power dissipation |
| DC Current Gain | 30 | hFE / Beta |
| Frequency | 3MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| NJVMJD122T4G | NPN | DPAK | 100V | 8A | 1.75W |