MJD44H11A Transistor Datasheet & Specifications

NPN DPAK High Power Nexperia
VCEO
80V
Ic Max
8A
Pd Max
20W
hFE Gain
60

Quick Reference

The MJD44H11A is a NPN bipolar transistor in a DPAK package by Nexperia. This datasheet provides complete specifications including 80V breakdown voltage and 8A continuous collector current. Download the MJD44H11A datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerNexperiaOriginal Manufacturer
PackageDPAKPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO80VBreakdown voltage
Ic8ACollector current
Pd20WPower dissipation
DC Current Gain60hFE / Beta
Frequency160MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
NJVMJD44H11T4G NPN DPAK 80V 8A 20W
NJVMJD122T4G NPN DPAK 100V 8A 1.75W
MJD44H11T4 NPN DPAK 80V 8A 20W
MJD44H11J NPN DPAK 80V 8A 20W