MJE340G Transistor Datasheet & Specifications

NPN TO-126 High Power JSMSEMI
VCEO
300V
Ic Max
500mA
Pd Max
20W
hFE Gain
240

Quick Reference

The MJE340G is a NPN bipolar transistor in a TO-126 package by JSMSEMI. This datasheet provides complete specifications including 300V breakdown voltage and 500mA continuous collector current. Download the MJE340G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO300VBreakdown voltage
Ic500mACollector current
Pd20WPower dissipation
DC Current Gain240hFE / Beta
Frequency-Transition speed (fT)
VCEsat1VSaturation voltage
Vebo3VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
MJE13003(RANGE:20-30) NPN TO-126 400V 1A 1.25W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
3DD4244DM NPN TO-126 400V 3A 60W
MJE340STU-HXY NPN TO-126 350V 500mA 625mW
MJE340 NPN TO-126 350V 500mA 625mW