MJE340 Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
350V
Ic Max
500mA
Pd Max
625mW
hFE Gain
-

Quick Reference

The MJE340 is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 350V breakdown voltage and 500mA continuous collector current. Download the MJE340 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO350VBreakdown voltage
Ic500mACollector current
Pd625mWPower dissipation
DC Current Gain-hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat250@1A,2VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
MJE13003(RANGE:20-30) NPN TO-126 400V 1A 1.25W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
3DD4244DM NPN TO-126 400V 3A 60W
MJE340STU-HXY NPN TO-126 350V 500mA 625mW