MJE340STU-HXY Transistor Datasheet & Specifications

NPN TO-126 General Purpose HXY MOSFET
VCEO
350V
Ic Max
500mA
Pd Max
625mW
hFE Gain
-

Quick Reference

The MJE340STU-HXY is a NPN bipolar transistor in a TO-126 package by HXY MOSFET. This datasheet provides complete specifications including 350V breakdown voltage and 500mA continuous collector current. Download the MJE340STU-HXY datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-126Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO350VBreakdown voltage
Ic500mACollector current
Pd625mWPower dissipation
DC Current Gain-hFE / Beta
Frequency50MHzTransition speed (fT)
VCEsat250@1A,2VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ST13003-K-HXY NPN TO-126 500V 1.5A 1.25W
KSE13003-AS-HXY NPN TO-126 500V 1.5A 1.25W
MJE13003(RANGE:20-30) NPN TO-126 400V 1A 1.25W
3DD4242DM-126 NPN TO-126 400V 1.5A 20W
13003 NPN TO-126 400V 2A 30W
YFW13003 NPN TO-126 480V 1.5A 1.25W
3DD4244DM NPN TO-126 400V 3A 60W
MJE340 NPN TO-126 350V 500mA 625mW