FZT688B Transistor Datasheet & Specifications

NPN SOT-223 High Power DIODES
VCEO
12V
Ic Max
4A
Pd Max
3W
hFE Gain
500

Quick Reference

The FZT688B is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 12V breakdown voltage and 4A continuous collector current. Download the FZT688B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO12VBreakdown voltage
Ic4ACollector current
Pd3WPower dissipation
DC Current Gain500hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZX5T851GTA NPN SOT-223 60V 6A 1.6W
ZXTN2005GTA NPN SOT-223 25V 7A 3W
STN851 NPN SOT-223 60V 5A 1.6W
FZT688BTA NPN SOT-223 12V 4A 1.6W
FZT855TA NPN SOT-223 150V 5A 3W
ZXTN19020DGTA NPN SOT-223 20V 9A 12.8W
FZT853TA NPN SOT-223 100V 6A 3W
PBSS306NZ,135 NPN SOT-223 100V 5.1A 1.7W
FZT1049ATA NPN SOT-223 25V 5A 3W
PBSS4540Z,115 NPN SOT-223 40V 5A 2W