ZXTN2005GTA Transistor Datasheet & Specifications
NPN
SOT-223
High Power
DIODES
VCEO
25V
Ic Max
7A
Pd Max
3W
hFE Gain
300
Quick Reference
The ZXTN2005GTA is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 25V breakdown voltage and 7A continuous collector current. Download the ZXTN2005GTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 25V | Breakdown voltage |
| Ic | 7A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 300 | hFE / Beta |
| Frequency | 150MHz | Transition speed (fT) |
| VCEsat | 55mV | Saturation voltage |
| Vebo | 8.1V | Emitter-Base voltage |
| Cutoff Current | 1nA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| FZT849TA | NPN | SOT-223 | 30V | 7A | 3W |
| ZXTN19060CGTA | NPN | SOT-223 | 60V | 7A | 3W |