ZXTN19060CGTA Transistor Datasheet & Specifications
NPN
SOT-223
High Power
DIODES
VCEO
60V
Ic Max
7A
Pd Max
3W
hFE Gain
160
Quick Reference
The ZXTN19060CGTA is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 7A continuous collector current. Download the ZXTN19060CGTA datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 60V | Breakdown voltage |
| Ic | 7A | Collector current |
| Pd | 3W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 130MHz | Transition speed (fT) |
| VCEsat | - | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | - | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |