ZXTN19020DGTA Transistor Datasheet & Specifications

NPN SOT-223 High Power DIODES
VCEO
20V
Ic Max
9A
Pd Max
12.8W
hFE Gain
130
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Quick Reference

The ZXTN19020DGTA is a NPN bipolar transistor in a SOT-223 package by DIODES. This datasheet provides complete specifications including 20V breakdown voltage and 9A continuous collector current. Download the ZXTN19020DGTA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO20VBreakdown voltage
Ic9ACollector current
Pd12.8WPower dissipation
DC Current Gain130hFE / Beta
Frequency160MHzTransition speed (fT)
VCEsat35mVSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all SOT-223 NPN Transistors ›